specifications and information are subject to change without notice triquint semiconductor inc. ? phone 1-800-wj1-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 1 of 4 october 2008 WJA1510 +5v active-bias ingap hbt gain block product features ? cascadable gain block ? 50 ? 1000 mhz ? 14 db gain ? +20 dbm p1db ? +47 dbm oip3 ? +61 dbm oip2 ? operates from +5v @ 95ma ? robust 1000v esd, class 1c ? rohs-compliant sot-89 package applications ? if amplifier ? vhf/uhf transmission ? wireless infrastructure ? general purpose ? catv / ftth product description the WJA1510 is cascadable gain block that offers high linearity in a low-cost surface-mount package. at 200 mhz, the WJA1510 typically provides 14 db gain, +47 dbm oip3, and +20 dbm p1db. the device is housed in a rohs-compliant sot-89 industry-standard smt package using a nipdau plating to eli minate the possibility of tin whiskering. the WJA1510 consists of darlin gton pair amplifiers using a high reliability ingap/gaas hbt process technology. the mmic amplifier is internally matched to 50 ? and only requires dc-blocking capacitors and a bias inductor for operation. an internal active bias is designed to enable stable performance over temperature. a dropping bias resistor is not required allowi ng the device to be biased directly from +5v supply voltage. the amplifier is targeted for high performance if applications in existing and next generation wireless technologies. the WJA1510 is ideal for general purp ose applications such as lo buffering, if amplifier and pre-driver stages within the 50 to 1000 mhz frequency range. functional diagram rf in gnd rf out gnd 1 23 4 function pin no. input 1 output/bias 3 ground 2, 4 specifications (1) parameter units min typ max operational bandwidth mhz 50 1000 test frequency mhz 200 gain db 12.8 14.4 15.8 input return loss db 11 output return loss db 16 output p1db dbm +19.8 output ip3 (2) dbm +40 +47.0 output ip2 dbm +61.2 noise figure db 5.4 device voltage v 5 device current ma 82 95 102 1. test conditions: 25 oc, supply voltage = +5 v, 50 system. s-parameters and 3oip measured at device pins. all other specificati ons measured on evaluation board. 2. 3oip measured with two tones at an output power of 8 dbm/tone separated by 1 mhz. the suppression on the largest im3 product is used to calculate the 3oip using a 2:1 rule. absolute maximum rating parameter rating storage temperature -55 to +150 c supply voltage +6.5 v input power +24 dbm jc (junction to paddle) 78 c / w maximum junction temperature 150 c operation of this device above any of thes e parameters may cause permanent damage. typical performance (3) parameter units typical frequency mhz 70 170 240 500 900 s21 db 15.0 14.3 14.2 14.1 13.8 s11 db -10 -11 -12 -13 -16 s22 db -20 -17 -16 -17 -15 output p1db dbm +19. 6 +19.7 +19.8 +19.8 19.6 output ip3 (2) dbm +41.6 +48.0 +52.5 +40.8 +36.1 output ip2 dbm 60.1 61.4 61.2 64.1 64.2 noise figure db 5.2 5.3 5.4 5.6 6 3. listed typical performance parame ters measured on evaluation board ordering information part no. description WJA1510 +5v active bias ingap hbt gain block (lead-free/green/rohs-co mpliant sot-89 package) WJA1510-pcb 50 ? 1000 mhz fully assembled eval. board standard tape / reel size = 1000 pieces on a 7 reel
specifications and information are subject to change without notice triquint semiconductor inc. ? phone 1-800-wj1-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 2 of 4 october 2008 WJA1510 +5v active-bias ingap hbt gain block typical evaluation board rf performance supply bias = +5v, i cc = 95 ma 1. test conditions: t = 25 oc, supply voltage = +5 v, icc = 95 ma typical, 50 system. 2. 3oip measured with two tones at an output power of 8 db m/tone separated by 1 mhz. the suppression on the largest im3 produc t is used to calculate the 3oip using a 2:1 rule. gain vs. frequency 10 12 14 16 18 20 0 500 1000 1500 2000 frequency (mhz) gain ( db ) -40c +25c +85c return loss t=25c -30 -25 -20 -15 -10 -5 0 0 200 400 600 800 1000 frequency (mhz) s11, s22 ( db ) s11 s22 noise figure vs. frequenc y 2 3 4 5 6 7 8 9 10 0 200 400 600 800 1000 frequency (mhz) nf ( db ) -40c +25c +85 c gain vs. pout freq = 200 mhz 10 12 14 16 18 20 10 12 14 16 18 20 pout (dbm) gain ( db ) oip3 vs. frequency pout =8 dbm/tone 25 30 35 40 45 50 55 0 200 400 600 800 1000 frequency (mhz) oip3 ( dbm ) -40c +25c +85c oip3 vs. vcc 25 30 35 40 45 50 4.5 4.6 4.7 4.8 4.9 5 5.1 5.2 vcc (v) oip3 ( dbm ) oip2 vs. frequency pout = 4 dbm/tone 45 50 55 60 65 70 75 0 200 400 600 800 1000 frequency (mhz) oip2 ( dbm ) p1db vs. frequency 18 19 20 21 22 0 200 400 600 800 1000 frequency (mhz) p1db ( dbm ) -40c +25c +85c p1db vs. vcc 10 12 14 16 18 20 22 4.7 4.8 4.9 5 5.1 5.2 vcc (v) p1db ( dbm ) icc vs. temperature vcc = +5v 75 80 85 90 95 100 -50 -25 0 25 50 75 100 temperature (c) icc ( ma ) icc vs. vcc 20 40 60 80 100 120 140 160 4.0 4.5 5.0 5.5 6.0 vcc (v) icc ( ma ) -40c +25c +85c
specifications and information are subject to change without notice triquint semiconductor inc. ? phone 1-800-wj1-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 3 of 4 october 2008 WJA1510 +5v active-bias ingap hbt gain block application circuit recommended component values (1) ref. name value / type size l1 470 nh ferrite core wire wound inductor (2) 0805 c1, c2 1000 pf npo chip capacitor 0603 c3 0.018 f chip capacitor 0603 r1, r2, r4 0 (3) 0603 c4, c5, c6, r3, r5, r6, r7, r8 do not place (3) 1. the listed values are contained on the evaluation board to achieve optimal broadband performance 2. for lower cost and performance (100 ? 1000 mhz) option use 470 nh air core wire wound inductor. 3. place holders for the 0 resistors and ?do not place? references are not needed for final design. typical device data s-parameters (v device = +5v, i cc = 95 ma, t = 25 c, calibrated to device leads) freq (mhz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 10 -12.77 -64.38 18.95 166.61 -22.12 17.45 -9.47 -43.08 50 -11.98 -145.22 15.46 163.24 -19.23 6.80 -14.81 -120.56 100 -11.87 -163.57 14.75 166.21 -19.02 2.10 -16.15 -145.12 150 -11.93 -170.62 14.56 165.57 -18.93 -0.28 -16.59 -154.63 200 -11.87 -174.76 14.46 163.82 -18.91 -2.15 -16.66 -160.13 250 -11.90 -177.65 14.44 162.12 -18.87 -3.79 -16.80 -162.79 300 -11.89 -179.69 14.42 159.72 -18.91 -5.44 -16.91 -163.90 350 -11.89 179.27 14.45 156.83 -18.93 -6.35 -16.99 -164.35 400 -11.94 177.23 14.43 154.00 -18.89 -7.81 -17.12 -165.69 450 -11.98 177.47 14.44 151.77 -18.89 -9.08 -17.09 -164.34 500 -11.99 175.53 14.41 148.73 -18.83 -10.20 -17.27 -166.02 550 -12.07 173.93 14.41 146.00 -18.94 -12.28 -17.28 -165.90 600 -12.12 173.55 14.37 143.20 -18.95 -13.22 -17.44 -166.63 650 -12.27 173.05 14.38 140.60 -18.89 -14.33 -17.44 -165.69 700 -12.31 172.54 14.34 137.35 -18.91 -15.26 -17.30 -163.67 750 -12.47 171.88 14.33 135.52 -18.84 -17.12 -17.44 -163.09 800 -12.57 170.01 14.29 132.20 -18.88 -18.53 -17.48 -162.89 850 -12.76 169.51 14.32 128.96 -18.88 -19.15 -17.28 -160.27 900 -13.04 168.70 14.25 126.41 -18.82 -20.48 -16.99 -158.37 950 -13.23 167.72 14.33 123.61 -18.89 -22.20 -16.70 -156.62 1000 -13.42 165.38 14.32 120.57 -18.92 -23.12 -16.51 -155.86 1050 -13.61 163.73 14.25 117.69 -18.82 -24.34 -16.14 -153.31 1100 -13.77 163.33 14.23 114.82 -18.85 -26.17 -15.89 -151.81 1150 -14.14 162.01 14.25 111.79 -18.84 -27.43 -15.46 -150.31 1200 -14.41 160.56 14.21 108.31 -18.92 -28.23 -15.17 -148.90 device s-parameters are available for download from the website at: http://www.triquint.com c1 blocking capacitor rf out l1 rf choke c3 bypass capacitor r4 0 rf in c2 blocking ca p acito r vcc=+5.00v icc = 95 ma WJA1510 r1 0 r2 0
specifications and information are subject to change without notice triquint semiconductor inc. ? phone 1-800-wj1-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 4 of 4 october 2008 WJA1510 +5v active-bias ingap hbt gain block mechanical information this package is lead -free/green/rohs-compliant. it is comp atible with both le ad-free (maximum 260 c reflow temperature) and leaded (maximum 245 c reflow temperature) soldering processes. the plating material on the leads is nipdau. outline drawing land pattern product marking the WJA1510 will be mark ed with an ?a1510? designator with an alphanumeric lot code marked below the part designator. tape and reel specifications for this part are located on the website in the ?application notes? section. msl / esd rating esd rating: class 1c value: passes 1000v min. test: human body model (hbm) standard: jedec standard jesd22-a114 esd rating: class iv value: passes 1000v min. test: charged device model (cdm) standard: jedec standard jesd22-c101 msl rating: level 3 at +260 c convection reflow standard: jedec standard j-std-020 mounting config. notes 1. ground / thermal vias ar e critical for the proper performance of this device. vias should use a .35mm (#80 / .0135?) diameter drill and have a final plated thru diameter of .25 mm (.010?). 2. add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. mounting screws can be added near the part to fasten the board to a heatsink. ensure that the ground / thermal via region contacts the heatsink. 4. do not put solder mask on the backside of the pc board in the region where the boar d contacts the heatsink. 5. rf trace width depends upon the pc board material and construction. 6. use 1 oz. copper minimum. 7. all dimensions are in millimeters (inches). angles are in degrees. a1510 xxxx-x
|
